Method for manufacturing a semiconductor wiring base that includes a wiring base with wiring extending inside and outside of a mounting region

ABSTRACT

A method for manufacturing a semiconductor device is provided. A resin paste is applied to a wiring base including a wiring pattern. Then, a semiconductor chip having a plurality of electrodes is mounted to the wiring base. The electrodes and the wiring pattern face one another and are electrically connected. The wiring base and the semiconductor chip are bonded by curing the resin paste. The wiring pattern includes a wiring that continuously includes two or more first parts located inside a semiconductor chip mounting region and a second part that connects at least two of the first parts. The second part is located outside the semiconductor chip mounting region.

RELATED APPLICATIONS

This is a divisional application of U.S. Ser. No. 10/948,075 filed Sep.23, 2004 and issued as U.S. Pat. No. 7,262,496, which claims priority toJapanese Patent Application No. 2003-331492 filed Sep. 24, 2003 all ofwhich are hereby expressly incorporated by reference herein in theirentirety.

BACKGROUND

1. Field of the Invention

The present invention relates to a wiring base, a semiconductor device,a manufacturing method thereof and electronic equipment.

2. Background

The use of resin paste to bond a semiconductor chip to a wiring base isknown. It is also known that the semiconductor chip is mounted afterapplying the resin paste to the wiring base. At this time, if no voidsremain between the wiring base and the semiconductor chip, thereliability of the resulting semiconductor device is improved.

The present invention aims to provide a highly-reliable semiconductordevice, a manufacturing method thereof and electronic equipment.

SUMMARY

A method for manufacturing a semiconductor device according to a firstaspect of the invention includes a step of providing a resin paste to awiring base including a wiring pattern, a step of mounting asemiconductor chip including a plurality of electrodes to asemiconductor chip mounting region of the wiring base such that theelectrodes and the wiring pattern face each other and are electricallycoupled, and a step of curing the resin paste so as to bond the wiringbase and the semiconductor chip. The wiring pattern includes acontinuous wiring that includes more than one first part located insidethe semiconductor chip mounting region, and a second part that connectsat least two of the first parts. The second part is located outside thesemiconductor chip mounting region. According to the first aspect of theinvention, the wiring pattern includes more than one first part locatedinside the semiconductor chip mounting region and a second part thatconnects at least two of the first parts but is located outside thesemiconductor chip mounting region. Thus, the second part is locatedoutside the semiconductor chip mounting region. This makes it easy toflow the resin paste when the semiconductor chip is mounted. This canprevent voids from remaining between the wiring base and thesemiconductor chip, thereby enabling a highly-reliable semiconductordevice to be manufactured.

In the method for manufacturing a semiconductor device, an outline ofthe semiconductor chip mounting region is a rectangle. Each of the firstparts may extend in a direction intersecting a long side of the outlineof the semiconductor chip mounting region. This makes it easy to flowthe resin paste in a direction along a short side of the outline of thesemiconductor chip mounting region. Consequently, this makes it possibleto easily fill resin paste between the semiconductor chip and the wiringbase, thereby enabling a highly-reliable semiconductor device to bemanufactured.

In the method for manufacturing a semiconductor device, each of thefirst parts may extend in a direction that is parallel with the shortside of the outline of the semiconductor chip mounting region. Thismakes it easy to flow the resin paste in a direction along the shortside of the outline of the semiconductor chip mounting region.Consequently, this makes it possible to easily fill resin paste betweenthe semiconductor chip and the wiring base, thereby enabling ahighly-reliable semiconductor device to be manufactured.

In the method for manufacturing a semiconductor device, the resin pastemay be provided in a shape that extends along the long side of thesemiconductor chip mounting region. This makes it easier to fill resinpaste between the semiconductor chip and the wiring base, therebyenabling a highly-reliable semiconductor device to be manufactured.

The method for manufacturing a semiconductor device of a second aspectof the invention includes a step of providing a resin paste to a wiringbase including a wiring pattern, a step of mounting a semiconductor chipincluding a plurality of electrodes to a semiconductor chip mountingregion of the wiring base such that the electrodes and the wiringpattern face each other and are electrically coupled, and a step ofcuring the resin paste so as to bond the wiring base and thesemiconductor chip. The wiring pattern includes a wiring that is formedso as to enter the semiconductor chip mounting region from an outside,bend therein, and exit to the outside again. The wiring is formed suchthat the number of bends that form an acute angle is not more than one.According to the second aspect of the invention, the wiring patternincludes wiring that is formed such that the number of bends that forman acute angle is not more than one inside the semiconductor chipmounting region. This makes it easy to flow the resin paste inside thesemiconductor chip mounting region when the semiconductor chip ismounted. This can prevent voids from remaining between the wiring baseand the semiconductor chip, thereby enabling a highly-reliablesemiconductor device to be manufactured.

In the method for manufacturing a semiconductor device, an outline ofthe semiconductor chip mounting region is a rectangle. The resin pastemay be provided in a shape that extends along a long side of thesemiconductor chip mounting region. This makes it easier to fill resinpaste between the semiconductor chip and the wiring base, therebyenabling a highly-reliable semiconductor device to be manufactured.

In the method for manufacturing a semiconductor device, the resin pastemay be provided at a center part of the semiconductor chip mountingregion.

The semiconductor device of a third aspect of the invention ismanufactured by the above-mentioned methods.

Electronic equipment of a fourth aspect of the invention includes theabove-mentioned semiconductor device.

The wiring base of a fifth aspect of the invention includes a basesubstrate having an electronic element mounting region, and a wiringpattern formed on the base substrate. The wiring pattern includes acontinuous wiring that includes more than one first parts located insidethe electronic element mounting region, and a second part that connectsat least two of the first parts. The second part is located outside theelectronic element mounting region. According to the fifth aspect of theinvention, the wiring pattern includes more than one first part locatedinside the electronic element mounting region and a second part thatconnects at least two of the first parts but is located outside theelectronic element mounting region. Thus, the second part is locatedoutside the electronic element mounting region. This makes it easy toflow the resin paste inside the electronic element mounting region whenthe electronic element is mounted. As a result, it is possible toprovide a highly-reliable wiring base with few voids remaining betweenthe electronic element and the wiring base.

In the wiring base, an outline of the electronic element mounting regionis a rectangle. Each of the first parts may extend in a directionintersecting a long side of the outline of the electronic elementmounting region. This makes it easy to flow the resin paste in adirection along a short side of the outline of the electronic elementmounting region. As a result, it is possible to provide ahighly-reliable wiring base with few voids remaining between theelectronic element and the wiring base.

In the wiring base, each of the first parts may extend in a directionthat is parallel with the short side of the outline of the electronicelement mounting region. This makes it easy to flow the resin paste in adirection along the short side of the outline of the electronic elementmounting region. As a result, it is possible to provide ahighly-reliable wiring base with few voids remaining between theelectronic element and the wiring base.

The wiring base of a sixth aspect of the invention includes a basesubstrate having an electronic element mounting region, and a wiringpattern formed on the base substrate. The wiring pattern includes awiring that is formed so as to enter the electronic element mountingregion from an outside, bend therein, and exit to the outside again. Thewiring is formed such that the number of bends that form an acute angleis not more than one. According to the sixth aspect of the invention,the wiring pattern includes the wiring that is formed such that thenumber of bends that form an acute angle is not more than one inside theelectronic element mounting region. This makes it easy to flow the resinpaste inside the electronic element mounting region when the electronicelement is mounted. As a result, it is possible to provide ahighly-reliable wiring base with few voids remaining between theelectronic element and the wiring base.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating a manufacturing method for asemiconductor device according to a first embodiment of the invention.

FIG. 2 is a diagram illustrating the manufacturing method for asemiconductor device according to the first embodiment of the invention.

FIG. 3 is a diagram illustrating the manufacturing method for asemiconductor device according to the first embodiment of the invention.

FIG. 4 is a diagram illustrating the manufacturing method for asemiconductor device according to the first embodiment of the invention.

FIG. 5 is a diagram illustrating the manufacturing method for asemiconductor device according to the first embodiment of the invention.

FIG. 6 is a diagram illustrating a semiconductor device according to thefirst embodiment of the invention.

FIG. 7 is a diagram illustrating a manufacturing method for asemiconductor device according to a second embodiment of the invention.

FIG. 8 is a diagram illustrating a display device including asemiconductor device according to the embodiments of the invention.

FIG. 9 is a diagram illustrating electronic equipment including asemiconductor device according to the embodiments of the invention.

FIG. 10 is a diagram illustrating electronic equipment including asemiconductor device according to the embodiments of the invention.

DETAILED DESCRIPTION

Embodiments according to the invention will now be explained withreference to the drawings. However, the present invention is not limitedto the embodiments below.

First Embodiment

FIGS. 1 through 5 are diagrams explaining a manufacturing method for asemiconductor device according to a first embodiment of the invention.

The manufacturing method for a semiconductor device of the firstembodiment includes a preparation of a wiring base 10. (Refer to FIG. 1)

The wiring base 10 includes a base substrate 12. The base substrate 12may be made of either organic materials or inorganic materials, or acomposite structure of these materials. As for the base substrate 12made of an organic material, a flexible substrate made of a polyimideresin is exemplified. For the flexible substrate, a tape used in a FPC(Flexible Printed Circuit) and COF (Chip On Film) mount may be employed.For the base substrate 12 made of an inorganic material, a ceramicsubstrate and a glass substrate are exemplified. As shown in FIG. 1, anoverall shape of the base substrate 12 may be tape like. However, thebase substrate 12 of the invention is not limited to the tape likesubstrate.

The base substrate 12 includes a semiconductor chip mounting region 14.An outline of the semiconductor chip mounting region 14 is not limitedto any specified shape. A rectangle may be applicable. The outline ofthe semiconductor chip mounting region 14 may be congruent with a planarshape of a semiconductor chip mounted thereon. The semiconductor chipmounting region 14 is provided in one or multiple numbers in the regionof the base substrate 12 in which one semiconductor device is formed.

The wiring base 10 includes a wiring pattern 20. The wiring pattern 20is formed on the base substrate 12. The wiring pattern 20 is formed bysingle layer of or multilayer of, for example, any of copper (Cu),chromium (Cr), titanium (Ti), nickel (Ni), titanium tungsten (Ti—W),gold (Au), aluminum (Al), nickel vanadium (Ni—V), and tungsten (W). Thewiring pattern 20 may be bonded to the base substrate 12 with anadhesive member (not shown) so as to form a three-layer substrate (orthree-layer tape). In addition, the wiring pattern 20 may be formed onthe base substrate without the adhesive so as to form a two-layersubstrate (or two-layer tape). Forming methods for the wiring pattern 20are not limited to any specified methods. For example, the wiringpattern 20 may be formed by sputtering or the like. Also, the wiringpattern 20 may be formed by applying an additive method usingelectroless plating. In addition, the wiring pattern 20 may be formed byetching a metal foil. The wiring pattern 20 may be plated with solder,tin, gold, and nickel or the like. A lead for plating (not shown) mayalso be formed on the base substrate 12. The lead for plating may beformed so as to be electrically connected to the wiring pattern 20. Thismakes it possible to carry out plating to the wiring pattern 20 with thelead for plating.

The wiring pattern 20 includes a wiring 25. The wiring 25 may, forexample, be a power supply line and a ground line. The wiring 25includes two or more first parts 22 located inside the semiconductorchip mounting region 14. The wiring 25 includes a second part 24 locatedoutside the semiconductor chip mounting region 14. The second part 24connects at least two of the first parts 22. As shown in FIG. 1, thesecond part 24 may connect two of the first parts 22. Also, the secondpart 24 may connect more than two of the first parts 22 (not shown). Thewiring 25 is continuous in that it continuously includes the first parts22 and the second part 24. In other words, the wiring pattern 20includes the wiring 25 that continuously includes two or more firstparts 22 located inside the semiconductor chip mounting region 14 andthe second part 24 that connects at least two of the first parts 22 andis located outside the semiconductor chip mounting region 14. Since thesecond part 24 is located outside the semiconductor chip mounting region14, the second part 24 does not block a flow of the resin paste insidethe region 14. This makes it easy to flow a resin paste 30 inside thesemiconductor chip mounting region 14 in a process for mounting asemiconductor chip 40, which will be described later. This makes itdifficult for voids to remain between the wiring base 10 and thesemiconductor chip 40, thereby enabling a highly-reliable semiconductordevice to be manufactured.

The outline of the semiconductor chip mounting region 14 may be arectangle. In this case, each of the first parts 22 may extend in adirection intersecting a long side of the outline of the semiconductorchip mounting region 14. Also, each of the first parts 22 may extend ina direction parallel with a short side of the outline of thesemiconductor chip mounting region 14. This enables the resin paste toflow in the short side direction of the outline of the semiconductorchip mounting region 14. This makes it difficult for voids to remain inthe semiconductor chip mounting region 14, thereby enabling a highlyreliable semiconductor device to be manufactured.

The wiring base 10 may include a protection layer (not shown). Theprotection layer can prevent the wiring pattern 20 from corrosion or anelectrical short, thereby enabling a highly-reliable semiconductordevice to be manufactured. In this case, the protection layer mayinclude an opening. The opening may be located so as to overlap thesemiconductor chip mounting region 14. This enables the wiring pattern20 and the semiconductor chip 40 to be electrically connected.

Electronic elements other than the semiconductor chip may be mounted tothe wiring base 10. In this case, the same effect as that describedabove also can be achieved for making it difficult for voids to remainbetween the wiring base 10 and the electronic element, thereby enablinga highly-reliable electronic equipment to be manufactured. For theelectronic elements other than the semiconductor chip, a capacitor orthe like are exemplified.

As shown in FIG. 2, the method for manufacturing a semiconductor deviceof the embodiment includes providing the resin paste 30 to the wiringbase 10. Materials for the resin paste 30 are not limited to anyspecified materials. For example, an epoxy resin may be employed. Theresin paste 30 may be a non-conductive paste (NCP) or an anisotropicconductive paste (ACP) including conductive particles (not shown). Theresin paste 30 may be provided at a center part of the semiconductorchip mounting region 14. This enables the resin paste 30 to flow whenthe semiconductor chip 40 is mounted, thereby making it difficult forvoids to remain between the wiring base 10 and the semiconductor chip40. In addition, if the outline of the semiconductor chip mountingregion 14 is a rectangle, the resin paste 30 may be applied in the shapeextending along the long side of the outline of the semiconductor chipmounting region 14 as shown in FIG. 2. Thus, the resin paste 30 is notrequired to flow along the long side direction of the outline of thesemiconductor chip mounting region 14. This makes it easy to fill theresin paste 30 between the wiring base 10 and the semiconductor chip 40.However, aside from this, the resin paste 30 may be applied so as tocover the semiconductor chip mounting region 14.

As shown in FIG. 3 and FIG. 4, the method for manufacturing asemiconductor device of the embodiment includes mounting thesemiconductor chip 40 having a plurality of electrodes 42 to the wiringbase 10. FIG. 4 is a partially enlarged diagram of the sectional viewtaken along line IV-IV in FIG. 3. The semiconductor chip 40 is mountedto the semiconductor chip mounting region 14 of the wiring base 10. Thisprocess is carried out after the process that the resin paste 30 isapplied to the wiring base 10.

As above-mentioned, since the wiring pattern 20 including the wiring 25is formed on the wiring substrate 10, the resin paste 30 easily flows onthe wiring base 10. Since the semiconductor chip 40 is mounted afterapplying the resin paste 30, the resin paste 30 flows toward an edge ofthe semiconductor chip mounting region 14. If the resin paste 30 isapplied at the center part of the semiconductor chip mounting region 14,the resin paste 30 easily flows. This can prevent voids from remainingbetween the wiring base 10 and the semiconductor chip 40, therebyenabling a highly-reliable semiconductor device to be manufactured.

The semiconductor chip 40 may include an integrated circuit 44 formed bytransistors and memory elements or the like. (Refer to FIG. 4) Theelectrodes 42 may be electrically connected to the inside of thesemiconductor chip 40. Each of the electrodes 42 may include, forexample, a pad and a bump provided to the pad. In the embodiment shownin FIG. 5, the electrodes 42 and the wiring pattern 20 face each otherand are electrically connected. The electrodes 42 and the wiring pattern20 may be electrically connected with a contact therebetween. (Refer toFIG. 5) Moreover, if ACP is employed as the resin paste 30, conductiveparticles may be provided between the electrodes 42 and the wiringpattern 20 so as to achieve an electrical connection therebetween withthe conductive particles. A planar shape of the semiconductor chip 40 isnot limited to any specified shape. A rectangle may be applicable.

The method for manufacturing a semiconductor device of the embodimentincludes the process in which the wiring base 10 and the semiconductorchip 40 are bonded by curing the resin paste 30. The process for curingthe resin paste 30 (a heat treatment, an ultraviolet ray irradiation orthe like) may be carried out so as to bond the wiring base 10 and thesemiconductor chip 40 after mounting the semiconductor chip 40 to thewiring base 10. Alternatively, the process for mounting thesemiconductor chip 40 to the wiring base 10 and the process for curingthe resin paste 30 may be carried out simultaneously. For example, if athermosetting resin is employed as the resin paste 30, these twoprocesses may be carried out simultaneously by mounting thesemiconductor chip while heating the resin.

Subsequently, an inspection process, a process for cutting the wiringbase 10 or the like may be carried out to manufacture the semiconductordevice 1 shown in FIG. 6.

Second Embodiment

FIG. 7 is a diagram explaining a manufacturing method for asemiconductor device according to a second embodiment of the invention.In this embodiment, aforementioned explanations are applied as often aspossible.

The manufacturing method for a semiconductor device of this embodimentincludes preparing a wiring base 50 as shown in FIG. 7. The wiring base50 includes a base substrate 52 including a semiconductor chip mountingregion 54, and a wiring pattern 60 formed on the base substrate 52. Thewiring pattern 60 includes a wiring 65. The wiring 65 is formed so as toenter the semiconductor chip mounting region 54 from an outside, bendtherein, and exit to the outside again. The wiring 65 is formed suchthat the number of bends that form an acute angle is not more than one.Thus, the wiring 65 is formed such that the number of bends that form anacute angle is not more than one inside the semiconductor chip mountingregion 54. The same materials and forming methods for the wiring pattern60 can be applied as those of the aforementioned explanations of thewiring pattern 20. For the base substrate 52, the aforementionedexplanations of the base substrate 12 can be applied.

Subsequently, a process for applying the resin paste to the wiring base50, a process for mounting a semiconductor chip having a plurality ofelectrodes to the wiring base 50, and a process for curing the resinpaste so as to bond the wiring base 50 and the semiconductor chip may becarried out so as to manufacture the semiconductor device. (Refer toFIG. 6).

As above-mentioned, the wiring base 50 includes the wiring pattern 60.The wiring pattern 60 includes the wiring 65. The wiring 65 is formed soas to enter the semiconductor chip mounting region 54 from an outside,bend therein, and exit to the outside again. The wiring 65 is formedsuch that the number of bends that form an acute angle is not more thanone. This prevents a flow direction of the resin paste from beinglargely changed inside the semiconductor chip mounting region 54. Thismakes it easy to flow the resin paste on the wiring base 50. This makesit difficult for voids to remain between the wiring base and thesemiconductor chip, thereby enabling a highly-reliable semiconductordevice to be manufactured.

FIG. 8 shows a display device 1000 including a semiconductor deviceaccording to the embodiments of the invention. For the display device1000, a liquid crystal display or an electrical luminescence (EL)display device may be exemplified. For electronic equipment including asemiconductor device according to the embodiments of the invention, anotebook type personal computer 2000 is shown in FIG. 9 and a cellularphone 3000 is shown in FIG. 10.

The present invention is not limited to the above-mentioned embodiments.Various changes can be made. For example, the present invention includesconstructions that are substantively the same as those of described inthe above embodiments (for example, constructions including the samefunctions, methods, and results or constructions including the same aimsand results). Also, the present invention includes constructions whereinnonessential parts of the constructions described in the aboveembodiments are replaced. In addition, the present invention includesconstructions achieving the same aims as those of the constructionsdescribed in the above embodiments. Further, the present inventionincludes constructions in which related arts are added to theconstructions described in the above embodiments.

1. A method for manufacturing a semiconductor device, comprising:providing a resin paste to a wiring base on which a first portion of awiring pattern is provided in a semiconductor chip mounting region ofthe wiring base; mounting a semiconductor chip including a plurality ofelectrodes in the semiconductor chip mounting region after the providingthe resin paste such that the plurality of electrodes and the firstportion of the wiring pattern face each other and are electricallycoupled; and curing the resin paste so as to bond the wiring base andthe semiconductor chip; wherein the wiring pattern includes a wiringthat includes more than one first part located inside the semiconductorchip mounting region and a second part that connects at least two of thefirst parts; and the second part is located outside the semiconductorchip mounting region.
 2. The method for manufacturing a semiconductordevice according to claim 1, wherein: an outline of the semiconductorchip mounting region is a rectangle; and each of the first parts extendsin a direction intersecting a long side of the outline of thesemiconductor chip mounting region.
 3. The method for manufacturing asemiconductor device according to claim 2, wherein each of the firstparts extends in a direction that is parallel with a short side of theoutline of the semiconductor chip mounting region.
 4. The method formanufacturing a semiconductor device according to claim 2, wherein theresin paste is provided in a shape that extends in parallel with thelong side of the semiconductor chip mounting region.
 5. The method formanufacturing a semiconductor device according to claim 1, wherein: anoutline of the semiconductor chip mounting region is a rectangle; andeach of the first parts extends through the semiconductor chip mountingregion in a direction that is parallel with a short side of the outlineof the semiconductor chip mounting region.
 6. The method ofmanufacturing a semiconductor device according to claim 1, wherein anoutline of the semiconductor chip mounting region is a rectangle, andwherein the providing the resin paste includes providing the resin pastein a shape that extends in a direction that is parallel with a long sideof the outline of the semiconductor chip mounting region.
 7. A methodfor manufacturing a semiconductor device, comprising: providing a resinpaste to a wiring base on which a first portion of a wiring pattern isprovided in a semiconductor chip mounting region of the wiring base;mounting a semiconductor chip including a plurality of electrodes in thesemiconductor chip mounting region after the providing the resin pastesuch that the plurality of electrodes and the first portion of thewiring pattern face each other and are electrically coupled; and curingthe resin paste so as to bond the wiring base and the semiconductorchip; wherein the wiring pattern includes a wiring that enters thesemiconductor chip mounting region from outside, bends the semiconductorchip mounting region, and exits to the outside again; and the wiring isformed such that a number of bends that form an acute angle in thesemiconductor chip mounting region is not more than one.
 8. The methodfor manufacturing a semiconductor device according to claim 7, wherein:an outline of the semiconductor chip mounting region is a rectangle; andthe resin paste is provided in a shape that extends along a long side ofthe semiconductor chip mounting region.
 9. The method for manufacturinga semiconductor device according to claim 8, wherein: the resin paste isprovided at a center part of the semiconductor chip mounting region. 10.The method for manufacturing a semiconductor device according to claim7, wherein an outline of the semiconductor chip mounting region is arectangle, and wherein the providing the resin paste includes providingthe resin paste in a shape that extends along a long side of the outlineof the semiconductor chip mounting region.
 11. A method formanufacturing a semiconductor device, comprising: providing a resinpaste to a wiring base on which a first portion of a wiring pattern isprovided in a first region of the wiring base, the wiring patternincluding a wiring that has a first part, a second part, and a thirdpart between the first part and the second part, the first partoverlapping an outline of the first region, the second part overlappingthe outline of the first region, the third part bending in the firstregion; mounting a semiconductor chip including an electrode in thefirst region after the providing the resin paste such that the electrodeand the first portion of the wiring pattern face each other and areelectrically coupled; and curing the resin paste so as to bond thewiring base and the semiconductor chip, wherein the wiring is formedsuch that a number of bends of the third part that form an acute anglein the first region is not more than one.
 12. The method formanufacturing a semiconductor device according to claim 11, wherein theoutline of the first region is a rectangle, and wherein the providingthe resin paste includes providing the resin paste in a shape thatextends along a long side of the outline of the first region.
 13. Themethod for manufacturing a semiconductor device according to claim 12,wherein the resin paste is provided at a center part of the first regionin the providing the resin paste in the shape.